 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| TPC6107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV) TPC6107 Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 m (typ.) High forward transfer admittance: |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 A) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation Drain power dissipation DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -20 -20 12 -4.5 -18 2.2 0.7 1.3 -2.25 0.22 150 -55 to 150 Unit V V V A Pulse (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) JEDEC W W mJ A mJ C C 2-3T1A JEITA TOSHIBA Weight: 0.011 g (typ.) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 56.8 178.5 Unit C/W C/W Circuit Configuration 6 5 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 1 2006-11-17 TPC6107 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr ton VGS 0 V -5 V 4.7 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 10 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 12 V VDS = -10 V, ID = -200 A VGS = -2 V, ID = -2.2 A VGS = -2.5 V, ID = -2.2 A VGS = -4.5 V, ID = -2.2 A VDS = -10 V, ID = -2.2 A Min -20 -8 -0.5 4.8 ID = -2.2 A VOUT RL = 4.5 VDD -16 V, VGS = -5 V, - ID = -4.5 A Typ. 110 70 40 9.6 680 130 140 6 16 38 85 9.8 2 3 Max 10 -10 -1.2 180 100 55 ns nC pF S m Unit A A V V VDD -10 V - < 1%, tw = 10 s Duty = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Pulse drain reverse current Forward voltage (diode) (Note 1) Symbol IDRP VDSF Test Condition IDR = -4.5 A, VGS = 0 V Min Typ. Max -18 1.2 Unit A V Marking (Note 5) Lot code (month) Lot No. Part No. (or abbreviation code) S3G Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 2 2006-11-17 TPC6107 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) FR-4 25.4 x 25.4 x 0.8 Unit: (mm) (a) (b) Note 3: VDD = 16 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -2.25 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * on lower left of the marking indicates Pin 1. 3 2006-11-17 TPC6107 ID - VDS -5 -5 V -2.5 V -3 V -4 V -2.0 V Common source Ta = 25C Pulse test -1.9 V -10 ID - VDS -2.3 V -5 V -4 V -3 V -6 -2.5 V -1.9 V -4 -1.8 V -1.7 V -2 -1.6 V -2.0 V -2.2 V Common source Ta = 25C Pulse test Drain current ID (A) -1.8 V -3 -1.7 V -2 -1.6 V -1 -1.5 V VGS = -1.4 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Drain current ID (A) -4 -8 0 0 VGS = -1.4 V -1 -2 -3 -4 -5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -10 Common source VDS = -10 V Pulse test -1.0 VDS - VGS Common source Ta = 25C Pulse test -8 (V) -0.8 Drain current ID (A) Drain-source voltage -6 VDS -0.6 -4 -0.4 -2 25C -0.2 -1.1 A -2.2 A ID = -4.5 A 100C 0 0 -0.5 -1.0 -1.5 Ta = -55C -2.0 -2.5 0 0 -2 -4 -6 -8 -10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID (S) 100 Common source VDS = -10 V Pulse test Ta = -55C 25C 10 100C 3 1000 RDS (ON) - ID Common source Ta = 25C Pulse test Forward transfer admittance |Yfs| 30 Drain-source ON resistance RDS (ON) (m) 300 -2.0 V 100 -2.5 V VGS = -4.5 V 30 1 0.3 0.1 -0.1 -0.3 -1 -3 -10 -30 -100 10 -0.1 -0.3 -1 -3 -10 -30 -100 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPC6107 RDS (ON) - Ta 200 Common source -100 IDR - VDS Common source Ta = 25C Pulse test Drain-source ON resistance RDS (ON) (m) Pulse test 150 ID = -2.2 A -1.1 A VGS = -2.0 V 100 -4.5 A (A) Drain reverse current IDR -30 -10 -4 V -3 -2 V -1 -1 V -2.5 V 50 -2.2 A, -1.1 A VGS = -0 V -4.5 A, -2.2 A, -1.1 A -4.5 V 0 -80 -40 0 40 80 120 160 -0.3 -0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (C) Drain-source voltage VDS (V) C - VDS 10000 -2.0 Vth - Ta Common source Gate threshold voltage Vth (V) 3000 -1.6 (pF) VDS = -10 V ID = -200 A Pulse test 1000 Capacitance C Ciss -1.2 300 Coss 100 Common source Ta = 25C 30 f = 1 MHz VGS = 0 V 10 -0.1 -0.3 -1 -3 -10 -30 -100 Crss -0.8 -0.4 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.5 -30 Dynamic input/output characteristics VDS (V) Common source ID = -4.5 A Ta = 25C Pulse test -12 (W) Drain power dissipation PD 1.5 (1) DC 1.0 (2) t = 5 s 0.5 (2) DC Drain-source voltage (2) Device mounted on a glass-epoxy board (b) (Note 2b) -20 VDS -15 -8 V -8 -6 -10 -4 V VDD = -16 V -4 -5 VGS 0 0 -2 0 0 40 80 120 160 5 10 15 0 20 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2006-11-17 Gate-source voltage VGS 2.0 -25 -10 (V) (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) TPC6107 rth - tw 1000 rth (C/W) 300 Device mounted on a glassepoxy board (b) (Note 2b) 100 Transient thermal impedance 30 Device mounted on a glassepoxy board (a) (Note 2a) 10 3 1 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area -100 -30 ID max (Pulse)* (A) -10 1 ms* Drain current ID -3 10 ms* -1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. -0.3 -1 -3 -10 -0.3 VDSSmax -30 -100 -0.1 -0.1 Drain-source voltage VDS (V) 6 2006-11-17 TPC6107 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-17 |
Price & Availability of TPC6107
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |